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History of mosfet and igbt1/4/2023 ![]() ![]() StakPack IGBT from Hitachi Energy with unform chip pressure).Until the MOSFET came along in the 1970s, the bipolar transistor was the only "real" power transistor. There are high power press pack IGBTs that do not have wire bonds and eliminate above mentioned drawback (e.g. This is obviously more critical for applications with larger cyclic load variation within a time span of few seconds. The cyclic heating and cooling down may lead to material fatigue and failure of IGBT module. The soldered wire bonding is subject to a mechanical stress when experiencing temperature fluctuation due to duty cycles (expansion when heated up and compression when cooled down). The device often consists of a considerable quantity of tiny wires (wire bonds) inside that connect the individual chips. ![]() ![]() On the other hand, IGBT is subject to high thermal loads. The investigations showed that there are practically no signs of aging. After finishing the construction, the drive was decommissioned and the IGCTs were sent back to the manufacturer for a detailed analysis. One particular analysis was performed on a VFD serving in a mine hoist application during construction of Gotthard Basis Tunnel in Switzerland. Moreover, the materials inside the IGCT have some “sliding” room when being heated up and cooled down. That eliminates the need for wire bonding. The device has a disk structure (so called wafer) and the electrical contact is created by applying a pressure through the clamping device. Research, test results and analysis of used semiconductors from the field showed that IGCT power part practically does not age. As the switching frequency goes up the switching losses increase.įor lifetime considerations aging is certainly a topic. Switching losses obviously depend on the switching frequency. Semiconductors with low on-state voltage achieve lower conduction losses. These losses represent the smallest portion of semiconductor losses and can sometimes be completely neglected without making any notable error.Ĭonduction losses are product of the on-state voltage and actual load current. Losses in blocking state are caused by very small leakage current. Losses in blocking state What is the loss distribution? There are three components of semiconductor losses: They make up to 70-80% of total losses of the VFD. Semiconductor losses are typically the dominant losses of VFD. The other reason is to keep the cooling equipment small and generally achieve a compact VFD design with high power density. One reason is to achieve a power conversion with as high efficiency as possible. ![]()
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